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| PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 6.3 x 6.3 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES CMUSH2-4 Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20- January 2006) |
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